地址：湖北省·武汉市 珞瑜路1037号 华中科技大学电气大楼A座
讲座hg6686老版登录:“携手电气精英，与未来同行”系列讲座第 371 期
暨 IEEE PELS 武汉分会邀请学术报告
Francesco Iannuzzo received the M.Sc. degree in Electronic Engineering and the Ph.D. degree in Electronic and Information Engineering from the University of Naples, Italy, in 1997 and 2002, respectively. He is primarily specialized in power device modelling.
He is currently a professor of reliable power electronics at the Aalborg University, Denmark, where he is also part of CORPE, the Center of Reliable Power Electronics. His research interests are in the field of reliability of power devices, including mission-profile based life estimation, condition monitoring, failure modelling and testing up to MW-scale modules under extreme conditions. He is author or co-author of more than 220 publications on journals and international conferences, three book chapters and four patents. Besides publication activity, over the past years he has been contributing 17 technical seminars about reliability at
first conferences as ISPSD, EPE, ECCE, PCIM and APEC.
Prof. Iannuzzo currently serves as an Associate Editor for the IEEE Transactions on Industry Applications, Journal of Emerging and Selected Topics in Power Electronics (JESTPE), Open Journal of Power Electronics, EPE Journal, and Elsevier Microelectronics Reliability. He is vice-chair of the IAS Power Electronic Devices and Components Committee. In 2018 he was the general chair of the 29th ESREF, the first European conference on the reliability of electronics, which scored 400+ participants from 43 countries, and has been recently appointed general chair for the ECCE-Europe conference in 2023.
The Silicon-Carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) is the most disputed technology in power electronics over the last decade, as it represents a concrete candidate to take over the silicon-based traditional Insulated-Gate Bipolar Transistors (IGBTs). Many hurdles still need to be overtaken, though, including primarily cost and reliability.
The webinar presents the current issues and some case studies about testing for the reliability of SiC power MOSFETs. A brief introduction about the importance of reliability in power electronics is given along with some reference to the state-of-the-art SiC MOSFET technology. Afterward, a couple of detailed studies are presented, regarding both wear- and short-circuit capability, including the related issues at packaging and semiconductor level: i) implication of short circuit stress on threshold voltage and ii) implication of threshold voltage instabilities on aging phenomena.
讲座时间：2020 年 06 月 16 日 (周二) 下午 16:00-17:00
讲座主题：Silicon Carbide MOSFET Testing for Wear and Abnormal Conditions
参与方式：腾讯会议，会议号：474 803 5872